Si (100) 2× 1 epitaxy: a kinetic Monte Carlo simulation of the surface growth

We have carried out Kinetic Monte Carlo (KMC) simulations on the epitaxial growth of silicon (100)2 × 1 as a function of surface temperature (570-770 °C). The KMC algorithm including almost 130 reactions such as silane adsorption, SiH_x decomposition and diffusion of adsorbed species supplies an exhaustive stochastic model reproducing the surface growth of silicon (100)2 × 1 during silane gas phase epitaxy. The model provides a good representation of experimental observations and theoretical knowledge. Model predictions of hydrogen coverage are in good agreement with experimental data.